| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4efee27937b4a512f45809fed5293747 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T117-10 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-12 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2001-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7dda61ecdd6a60c7b5cc1f005fbd5c4f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb89c23dd3618c770e8322603ad7d26d |
| publicationDate |
2002-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-0203443-A1 |
| titleOfInvention |
Method and apparatus for forming an epitaxial silicon wafer with a denuded zone |
| abstract |
An apparatus and method are provided for forming a denuded zone and an epitaxial layer on a semiconductor wafer used in manufacturing electronic components. The denuded zone and epitaxial layer are formed in one chamber. The apparatus includes a plurality of upstanding pins immovably mounted on a susceptor and maintain a semiconductor wafer spaced from the susceptor during both application of the epitaxial layer and formation of the denuded zone. Fast cooling of the wafer is accomplished by having the wafer out of conductive heat transfer relation with the susceptor during cooling thereof. |
| priorityDate |
2000-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |