http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-0178127-A3

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filingDate 2001-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb2459c9e89cf0877cc50373a9eda2ca
publicationDate 2002-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-0178127-A3
titleOfInvention A method of improving adhesion of a cap layer to a porous material layer on a wafer
abstract A method of improving adhesion of a cap oxide to nanoporous silica for integrated circuit fabrication. In one embodiment, the method comprises several steps. The first step is to receive a wafer in a deposition chamber. Then a porous layer of material is deposited on the wafer. Next, a portion of the porous layer is densified in order to make it more compatible for adhesion to a cap layer. Finally, a cap layer is deposited onto the porous layer.
priorityDate 2000-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 26.