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| filingDate |
2001-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5791a700c55bfe52df5f23842668fd91
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| publicationDate |
2001-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-0159822-A1 |
| titleOfInvention |
A process for forming a semiconductor structure |
| abstract |
High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer (24) on a silicon wafer (22). The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer (26). Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1291930-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1291930-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10593710-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03012944-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11756966-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11056515-B2 |
| priorityDate |
2000-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |