http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-0150515-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ae0404be8305bd610628b4ea3dbe8d1e http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bcf7c963645e1db03940183e42ef54a4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ae82b5733c3bd2a762b0742ea6458b90 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78612 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2001-01-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a9e18214b61f80c2d00d384cfb69736 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_53af879db7f398a09724da8d1f3617be http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4eee6bf93d6ea7cfcc67d2245f231039 |
| publicationDate | 2001-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-0150515-A1 |
| titleOfInvention | Thin-film transistor |
| abstract | In a TFT (10), a channel region (15) facing a gate electrode (14) through a gate insulating film (12), a source electrode (16) connected to the channel region (15) and a drain region (17) connected to the channel region (15) on the side opposite this source region (16) are formed in a polycrystal semiconductor film (100) that was patterned in island forms. In the channel region (15), a recombination center (150) is formed for capturing a small number of carriers (holes) by impurities such as inert-gas, metals, Group III elements, Group IV elements and Group V elements introduced to a predetermined region in this channel region (15), or by defects generated due to the introduction of these impurities. The invention thus provides an arrangement restraining bipolar transistor type behavior, to stabilize saturation current and to provide a TFT that can improve reliability. |
| priorityDate | 2000-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.