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filingDate 1999-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_674ba6d35923cd115902ec1d1d77fec7
publicationDate 2000-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-0070680-A1
titleOfInvention Methods and compositions for improving interconnect metallization performance in integrated circuits
abstract A semiconductor device includes a plurality of interconnect metallization lines, each interconnect metallization line (38) being provided with an electromigration-impeding composition including a percentage by weight of aluminum, a percentage by weight of copper, and a percentage by weight of zinc. The electromigration-impeding composition of the lines may include a structure of a solid solution of Al and Zn in the form of grains (36). The grains are bounded by grain boundaries (37). The structure further includes a precipitate of Al and Cu defined in the grain boundaries. Electromigration of the Al from the grain boundaries occurs and tends to cause the Al to electromigrate from the grains. The percentage by weight of Zn is selected to both define the solid solution with Al and to impede the electromigration of the Al from the grains.
priorityDate 1999-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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