http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-0067281-A1

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filingDate 2000-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee1830f44b6ee15c8c9fa8d57d2ec4a0
publicationDate 2000-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-0067281-A1
titleOfInvention Plasma etching
abstract Provided is a method of etching an etch layer (86) using a polycarbonate layer (88) as a mask. The method includes placing an etch structure (80) in a reaction chamber, the etch structure (80) including an etch layer (86) underlying the polycarbornate layer (88), the polycarbonate layer (88) having apertures (90). The etch layer (80) is then etched using a low-pressure high density plasma generated at a pressure in the range of approximately 1 to 30 millitorr where the ionized particle concentration is at least 1011 ions/cm3, and where the ionized particle concentration is substantially equal throughout the volume of the reaction chamber. To increase the etch rate, the etch structure (80) can be cooled or biased. To decrease the etch rate, an inert gas can be added to the process gas mixture used to form the plasma.
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