| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_624b773df4d6b973925c2fdcc80a539e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_277ed19f6f57c1233a4852e2084ebec6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d78fe473c8a29219129bbc8bb50f6a59
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4eb57027943d335bfeca26f708abcd0b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0a46372e9712cee341546757af797e2c |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-26 |
| filingDate |
2000-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8b366fd45acee1a62674fbc9f19b016
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1a7e12d6a777f072d8f8e477613f138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7bc0e6f3f71bd49ba22a760893e8730a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_695a265afc9a1ddd959cf69aea484480 |
| publicationDate |
2000-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-0062343-A1 |
| titleOfInvention |
Soi wafer and method for producing soi wafer |
| abstract |
A high-quality SOI wafer having a roughness of the surface of an SOI layer of the SOI wafer is 0.12 nm or less in terms of RMS value and/or a roughness of the interface between the SOI layer and a burried oxide film is 0.12 nm or less in terms of RMS value. A method for producing such an SOI wafer in which an SOI wafer is mirror-polished, the natural oxide film on the SOI wafer is removed or a thermal oxide film having a thickness of 300 nm or more is formed on the surface and then the thermal oxide film is removed, and the wafer is subjected to a heat-treatment in 100% hydrogen gas, or in a mixture gas atmosphere of argon and/or nitrogen containing 10% or more of hydrogen by means of a rapid-heating/rapid-cooling device. Excellent roughnesses of the surface of the SOI layer and the SOI/BOX interface are realized hardly influencing the variations of the device characteristics such as the oxide film breakdown voltage, and the threshold voltage, the carrier mobility of a MOS device produced using such an SOI wafer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7407866-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004066390-A1 |
| priorityDate |
1999-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |