| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ede6f09abd2e830643874dcc6c2be97c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_27bfaea12ae40fba9f4be9b0513e95a0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_56a56811b8921296eb5dab9917e224c1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-343 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-40 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-02 |
| filingDate |
2000-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b74cc687e0e3bd6d51b29e152c9aefdc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_226d44630cdcd18f0ad9dff79512c995
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf306decf9fa5ecb573750718c5ffcb6 |
| publicationDate |
2000-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-0055398-A1 |
| titleOfInvention |
Method of crystal growth, method of forming fine semiconductor structure, semiconductor device, and system |
| abstract |
A method of crystal growth for producing a compound crystal material containing about several percentages nitrogen, such as a compound crystal semiconductor material comprising one or more Group III elements, nitrogen, and one or more Group V elements other than nitrogen, typically GaInNAs, which comprises conducting crystal growth under such conditions that a nitrogen source is utilized at a high efficiency. The method, in which a compound crystal containing nitrogen as a component thereof is formed, is characterized by using ammonia (NH3) as a nitrogen source and adding aluminum. The aluminum accelerates the decomposition/adsorption of the ammonia and thereby improves the efficiency of introduction of nitrogen into the crystal. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7187867-B2 |
| priorityDate |
1999-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |