| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_81cfb88d909c75104c0c8d61799a72b0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-033 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31691
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02197
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-448 |
| filingDate |
1999-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c411ead6814fba5d0c944c10233d4a9b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dfe03a7e12785a86a03e6f0b27094c98 |
| publicationDate |
2000-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-0037712-A1 |
| titleOfInvention |
Liquid delivery mocvd process for deposition of high frequency dielectric materials |
| abstract |
A liquid delivery MOCVD method for deposition of dielectric materials such as (Ba, Sr) titanates and (Zr, Sn) titanates, in which metal source compounds are dissolved or suspended in solvent and flash vaporized at temperatures of from about 100 °C to about 300 °C and carried via a carrier gas such as argon, nitrogen, helium, ammonia or the like, into a chemical vapor deposition reactor wherein the precursor vapor is mixed with a metal oxide film on the substrate at a temperature of from about 400 °C to about 1200 °C at a chemical vapor deposition chamber pressure of from about 0.1 torr to about 760 torr. The process is carried out in a chemical vapor deposition system containing a liquid delivery and flash vaporization assembly (102) where the precursors are provided in lines (106, 110, 114) and supplied to vaporize a unit (120). Such process may for example be employed to form a (Ba, Sr) titanate dielectric material wherein at least 60 atomic % of the total metal content of the oxide is titanium. The high dielectric material of the invention may be used to form capacitive microelectronic device structures for applications such as dynamic random access memories and high frequency capacitors. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6603033-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1992714-A1 |
| priorityDate |
1998-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |