| abstract |
A transistor using a transparent channel layer consisting of such material as zinc oxide and being transparent entirely or partially, wherein a channel layer (11) is formed of a transparent semiconductor such as zinc oxide ZnO, part or all of each of sources (12) and drains (13) or gates (14) use transparent electrodes, and the transparent electrodes use a transparent conductive material such as conductive ZnO formed by doping a group III element or the like. A gate insulating layer (15) uses a transparent insulating material such as insulating ZnO formed by doping a univalent element or a group V element. A substrate (16), if its transparency is desired, uses glass, sapphire, plastics or the like as a transparent material. |