| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N1-32 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B49-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B21-08 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N1-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B21-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B49-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321 |
| filingDate |
1999-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44d61b2c73989cd1556edff51046aa0b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea9a50dbe99c682dfca17e2b633003fd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b4f23ea15b0823b836bb4a04af93275 |
| publicationDate |
2000-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-0025983-A1 |
| titleOfInvention |
Use of zeta potential during chemical mechanical polishing for end point detection |
| abstract |
A technique for utilizing a sensor to monitor fluid pressure from a fluid bearing located under a polishing pad to detect a polishing end point. A sensor is located at the leading edge of a fluid bearing of a linear polisher, which is utilized to perform chemical-mechanical polishing on a semiconductor wafer. The sensor monitors the fluid pressure to detect a change in the fluid pressure during polishing, which change corresponds to a change in the shear force when the polishing transitions from one material layer to the next. In order to ensure that there is a noticeable difference in the shear force variation at the polishing end point, a slurry having a particular pH level is selected. The pH level ensures that the zeta potential changes noticeably from one material to the next, so as to induce a change in the shear force, which is detected by a change in the fluid pressure. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004522310-A |
| priorityDate |
1998-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |