| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49866
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14643
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-498
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0232 |
| filingDate |
2018-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd1215ccc0e3203d9f29fe9b937bdc98 |
| publicationDate |
2021-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-RE48590-E |
| titleOfInvention |
Semiconductor device, fabrication process, and electronic device |
| abstract |
A semiconductor device is provided, including a semiconductor substrate that includes a semiconductor; an electrode layer formed above a first surface side inside the semiconductor substrate; a conductor layer formed above the electrode layer and above the first surface of the semiconductor substrate; a hole formed through the semiconductor substrate from a second surface of the semiconductor substrate to the conductor layer; and a wiring layer that is electrically connected to the electrode layer via the conductor layer at an end portion of the vertical hole, and that extends to the second surface of the semiconductor substrate, the wiring layer being physically separated from the electrode layer by an insulating layer disposed therebetween. |
| priorityDate |
2011-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |