| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_21850e25b9ec7565680a10c9c300b989
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_eb2648e65ad8850515bd727a122f1186 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-10 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F7-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F7-10 |
| filingDate |
2006-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f1ca62ee87af8382e41a6767de1294e2 |
| publicationDate |
2016-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-RE45839-E |
| titleOfInvention |
Pentakis(dimethylamino) disilane precursor comprising compound and method for the preparation thereof |
| abstract |
Pentakis(dimethylamino) disilane with general formula (1): Si2(NMe2)5Y, where Y is selected from the group comprising H, Cl or an amino group its preparation method and its use to manufacture gate dielectric films or etch-stop dielectric films of SiN or SiON. |
| priorityDate |
2006-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |