| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823468
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823425 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-70 |
| filingDate |
2013-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_52de0d49eb322d5c5a38920ace7977fb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f59bc4487c8f6f2f733f3316d4e632df
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75c1b4d617b45830c5282ec94b6941cf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a5c24aed98558f9a3fd25321c889216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_63ca43f5a401d4b776be8555f3358475 |
| publicationDate |
2014-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-RE45060-E |
| titleOfInvention |
Spacer structures of a semiconductor device |
| abstract |
The disclosure relates to spacer structures of a semiconductor device. An exemplary structure for a semiconductor device comprises a substrate having a first active region and a second active region; a plurality of first gate electrodes having a gate pitch over the first active region, wherein each first gate electrode has a first width; a plurality of first spacers adjoining the plurality of first gate electrodes, wherein each first spacer has a third width; a plurality of second gate electrodes having the same gate pitch as the plurality of first gate electrodes over the second active region, wherein each second gate electrode has a second width greater than the first width; and a plurality of second spacers adjoining the plurality of second gate electrodes, wherein each second spacer has a fourth width less than the third width. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I662620-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11244868-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11063039-B2 |
| priorityDate |
2010-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |