| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_902f9fd288a29cd54c68158e61055962 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-90
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-24 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1233
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-17724
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-023
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8416
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1616
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1625
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-2463
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-2436
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-085
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-882
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-141
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1675
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-122
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-142
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-149
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-1776
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8845
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-841 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K19-177 |
| filingDate |
2015-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6f755fc91441dde9335506eeffe7011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_70719f47c9ca292a271d9c8ec3be6bc5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68fc2b69b7a66914f9f69ecb1c1d1308 |
| publicationDate |
2018-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9991894-B2 |
| titleOfInvention |
Resistive random access memory cells |
| abstract |
A layout arrangement for a resistive random access memory cell includes an active area, a polysilicon row address line over the active region, a metal column address line running orthogonal to the row address line and having an active region contact portion extending over the active region and having a contact to the active region. A metal output line runs parallel to the column address line over the active region. A first cell contact region intersects with the output line and has a contact to the active region. A first metal cell contact region forms an intersection with the first cell contact region. A first resistive random access memory device is formed at the intersection of the first cell contact region and the output line. A second resistive random access memory device is formed at the intersection of the first cell contact region and the first cell contact region. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11671099-B2 |
| priorityDate |
2009-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |