| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_49f04b1dc6b9fcc2d8b159c5ebee364b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1446
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1464
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02366
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02363
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0236 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-02 |
| filingDate |
2017-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5fa54a6f8af7c9f34e53c43a536ab562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2060c36b97f1575328bfb350cfe8fe48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3cd0ae49b7467923a22a3406f206d4a3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_22c2fc2f6a25edb4b98a206c67c757e7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e5e299371e94c4db4e2e8703b329e5f |
| publicationDate |
2018-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9972729-B2 |
| titleOfInvention |
Photodiode and photodiode array |
| abstract |
A p − type semiconductor substrate 20 has a first principal surface 20 a and a second principal surface 20 b opposed to each other and includes a photosensitive region 21 . The photosensitive region 21 is composed of an n + type impurity region 23 , a p + type impurity region 25 , and a region to be depleted with application of a bias voltage in the p − type semiconductor substrate 20 . An irregular asperity 10 is formed in the second principal surface 20 b of the p − type semiconductor substrate 20 . An accumulation layer 37 is formed on the second principal surface 20 b side of the p − type semiconductor substrate 20 and a region in the accumulation layer 37 opposed to the photosensitive region 21 is optically exposed. |
| priorityDate |
2009-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |