patent/US-9970127-B2

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9970127-B2

Outgoing Links

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filingDate	2016-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate	2018-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e5be48cdcf16a99e98320f81b7ca4281 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2bcb674eb3200af357ef408a4785a551 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb335e806917b187ad153cd44b76d473 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b9c0588214a5f3a8c1add9e96603177 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2bf0cf315d6fb3ec9ba2fb89ea7ea422 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4dd5eddc87f22dd80bec0712aef03c6
publicationDate	2018-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	US-9970127-B2
titleOfInvention	Method and apparatus for producing large, single-crystals of aluminum nitride
abstract	Bulk single crystals of AlN having a diameter greater than about 25 mm and dislocation densities of about 10,000 cm −2 or less and high-quality AlN substrates having surfaces of any desired crystallographic orientation fabricated from these bulk crystals.
isCitedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11384449-B2
priorityDate	2001-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 70.