| abstract |
The substrate processing apparatus includes a reaction chamber configured to accommodate a substrate; a first gas supply unit configured to supply a first process gas containing a silicon element to the substrate; a second gas supply unit configured to supply a second process gas containing a silicon element and a chlorine element to the substrate; an exhaust unit configured to exhaust the first process gas and the second process gas; a cleaning gas bypass supply unit configured to supply a cleaning gas to the exhaust unit; a cleaning monitoring unit installed in the exhaust unit; a gas flow rate control unit configured to adjust an amount of the cleaning gas supplied; and a main control unit configured to control the gas flow rate control unit in response to a signal received from the cleaning gas monitoring unit. |