http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9966449-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-456 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28512 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 |
| filingDate | 2014-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f03af762686948f3a1621620b18c1c32 |
| publicationDate | 2018-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-9966449-B2 |
| titleOfInvention | Methods of forming semiconductor devices, including forming a contact including an alkaline earth metal on a semiconductor layer, and related devices |
| abstract | Methods of forming a semiconductor device are provided. A method of forming a semiconductor device may include forming a metal contact that includes a heavy alkaline earth metal on an n-type semiconductor layer. The heavy alkaline earth metal may underlie a metal layer and/or a capping layer. Related semiconductor devices are also provided. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10622450-B2 |
| priorityDate | 2013-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.