http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9966385-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9047b16961c0aee78d7de367969339b2 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11582 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11578 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-35 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11582 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11578 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11565 |
| filingDate | 2016-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a6e8b621d6957011aee3ba68978543a4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9280322c0d5b93e44d244f5dbd820720 |
| publicationDate | 2018-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-9966385-B2 |
| titleOfInvention | Semiconductor memory device |
| abstract | According to one embodiment, a semiconductor memory device includes a substrate, a stacked body, columnar portions, and first and second interconnection portions. The stacked body includes insulating layers and electrode layers alternately stacked one layer by one layer on the substrate. The columnar portions are provided between the first and second interconnection portions and include a first row having a first columnar portion and a second row having a second columnar portion, the first columnar portion being positioned closest to the first interconnection portion, and the second columnar portion being positioned closest to the second interconnection portion. A distance between the first interconnection portion and the first columnar portion is smaller than a distance between the second interconnection portion and the second columnar portion, and the distance between the second interconnection portion and the second columnar portion is greater than 20 nanometers. |
| priorityDate | 2016-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.