| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c72d118f5664072de841f9c5c34b9d99 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-085
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01T1-249
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022408
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01T1-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0296
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02966 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0296
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01T1-24 |
| filingDate |
2014-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_24a7a8a20944029a859cbdfbc8799a4b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb0f911da72a2b5f89e4519546e9513d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_00ffd0183475548d3099ba2de930ca6d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b19ae9f6633db5fce5f077d7077c7ac
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b96cb07b7510b7d468509c5dd796bca0 |
| publicationDate |
2018-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9954132-B2 |
| titleOfInvention |
Systems and methods for detectors having improved internal electrical fields |
| abstract |
A radiation detector is provided including a cathode, an anode, and a semiconductor wafer. The semiconductor wafer has opposed first and second surfaces. The cathode is mounted to the first surface, and the anode is mounted to the second surface. The semiconductor wafer is configured to be biased by a voltage between the cathode and the anode to generate an electrical field in the semiconductor wafer and to generate electrical signals responsive to absorbed radiation. The electrical field has an intensity having at least one local maximum disposed proximate to a corresponding at least one of the first surface or second surface. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10976452-B2 |
| priorityDate |
2014-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |