Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76855 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5283 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
filingDate |
2017-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2018-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e12a5d6ca237d64ab27c2711f3c6ca5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef8325a06e5a9fe893533f96482cf53d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d0d4593599d09d89b49e74b9f4367af http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_62b81c8ce15f16f24672c0340216ffa6 |
publicationDate |
2018-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-9953927-B1 |
titleOfInvention |
Liner replacements for interconnect openings |
abstract |
Structures for a liner replacement in an interconnect structure and methods for forming a liner replacement in an interconnect structure. A metallization level is formed that includes a conductive feature. A dielectric layer is formed on the metallization level. The dielectric layer includes an opening that extends vertically through the dielectric layer to the conductive feature. An adhesion layer is formed on area of the conductive feature exposed at a base of the opening. The adhesion layer has a thickness equal to a monolayer or a fraction of a monolayer. Another layer (e.g., barrier layer) of a different composition (e.g., TiN) may be deposited on the adhesion layer before the opening is filled with metal deposited by chemical vapor deposition. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11183424-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10741442-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11043413-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019371660-A1 |
priorityDate |
2017-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |