Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d9bf17d44b02be119c284ba72328c2c9 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-308 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-5806 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B1-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K9-0094 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-086 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02664 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-042 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B3-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B1-16 |
filingDate |
2017-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2018-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ae88f603300d7f72313f26521bcd0e6c |
publicationDate |
2018-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-9952355-B1 |
titleOfInvention |
Spatially controlled conductivity in transparent oxide coatings |
abstract |
A method of coating an optical substrate includes depositing a semiconductor coating over a surface of an optical substrate, wherein the semiconductor coating has broadband optical transmittance. Portions of the semiconductor coating are doped to form a spatially varied pattern of doped semiconductor in the semiconductor coating. The method includes annealing the semiconductor coating to do at least one of: increase oxygen in undoped areas of the semiconductor coating; or reduce oxygen in doped areas of the semiconductor coating. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021062162-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10955747-B2 |
priorityDate |
2017-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |