| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate |
2016-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d469487bdd4808d8e8c9367ab15b74dc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86f13f632c004bca8005ee04c8319f84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f8e48786a94a978e6309f8dbb24ba5ca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0beb5b7ec66225770e8565660b32dec3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_288c4fd363333219a2f8d548f8e082e0 |
| publicationDate |
2018-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9947769-B1 |
| titleOfInvention |
Multiple-layer spacers for field-effect transistors |
| abstract |
Structures for spacers in a device structure for a field-effect transistor and methods for forming spacers in a device structure for a field-effect transistor. A first spacer is located adjacent to a vertical sidewall of a gate electrode, a second spacer is located between the first spacer and the vertical sidewall of the gate electrode, and a third spacer is located between the second spacer and the vertical sidewall of the gate electrode. The first spacer has a higher dielectric constant than the second spacer. The first spacer has a higher dielectric constant than the third spacer. The third spacer has a lower dielectric constant than the second spacer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11522074-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10516035-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11222960-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10950714-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10510874-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11437492-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019165127-A1 |
| priorityDate |
2016-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |