| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1e96496a9949403e2af2ca913e65bfec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b3c2e77f8dfda692ca527454d23ecc03 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2251-303
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-0048
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-484
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K2102-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-0948
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3135
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-0026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K19-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-0525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-231
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-88
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-0007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-0017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-215
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-0545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-221
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-055
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-0023
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-472 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K19-0948
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K19-21
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-00 |
| filingDate |
2017-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8cb3863c565f40423d577fefc862fc1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_584cb7acd4511bd2c0f38469754ad094
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a2b047eb097905b7840b73f295793638
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c313ebc7fe7b91492e426c14ccd6dc7b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ad5d5150c5a8d97d5999815cf20b8d6 |
| publicationDate |
2018-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9947724-B2 |
| titleOfInvention |
Ultralow power carbon nanotube logic circuits and method of making same |
| abstract |
A method of fabricating a CMOS logic device with SWCNTs includes forming a plurality of local metallic gate structures on a substrate by depositing a metal on the substrate; forming a plurality of contacts on the substrate; and depositing the SWCNTs on the substrate, and doping a certain area of the SWCNTs to form the CMOS logic device having at least one NMOS transistor and at least one PMOS transistor. Each of the NMOS and PMOS transistors has a gate formed by one of the local metallic gate structures, and a source and a drain formed by two of the contacts respectively. The gate of each PMOS transistor and the gate of each NMOS transistor are configured to alternatively receive at least one input voltage. At least one of the drain of the PMOS transistor and the drain of the NMOS transistor is configured to output an output voltage. |
| priorityDate |
2013-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |