| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f4a8faea375370b67c9d71e67db32bcd |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-543
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-541 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0352
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0749
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0368 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-032
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0749
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0352 |
| filingDate |
2016-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8673dc514b73fddc31a474808b44fc8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c618ea04ddf005f1903a362fea83fa90
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b686d36ded149c131ae7fe2ea513f1de
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e3e18d3c675baad67fe307ce39c56f3a |
| publicationDate |
2018-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9935219-B2 |
| titleOfInvention |
Photoelectric conversion device |
| abstract |
It is an object of the present invention to improve photoelectric conversion efficiency in a photoelectric conversion device. The photoelectric conversion device 11 according to the present invention uses a polycrystalline semiconductor layer including a plurality of semiconductor particles 3 a coupled together as a light-absorbing layer 3 , each of the semiconductor particles 3 a including a group I-III-VI compound, each of the semiconductor particles 3 a having a higher composition ratio P I of a group I-B element to a group III-B element in a surface portion thereof than that in a central portion thereof. |
| priorityDate |
2011-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |