| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-461
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-043
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
| filingDate |
2017-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97232b8caf69d3f7411b6876f7316320
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d9bec2cd4ecf98f715c44fee75865f18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7474a2c3f35e83e8a76b06c527e7176c |
| publicationDate |
2018-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9922972-B1 |
| titleOfInvention |
Embedded silicon carbide block patterning |
| abstract |
A lithography method and accompanying structure for decreasing the critical dimension (CD) and improving the CD uniformity within semiconductor devices uses a layer of silicon carbide as an embedded blocking mask for defining semiconductor architectures, including contact trench openings to form trench silicide contacts. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11171002-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10312103-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11289371-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10580652-B2 |
| priorityDate |
2017-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |