http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9919915-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1e6ddf53a7a8db01a5314268a2c323b9 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2203-0109 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2207-012 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2207-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2203-0792 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B7-007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00301 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00095 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-552 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2016-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45efbd7482906dceaf6e6565bf119239 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ee810cd6ceb42efe1b00a2fa1511735 |
| publicationDate | 2018-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-9919915-B2 |
| titleOfInvention | Method and system for MEMS devices with dual damascene formed electrodes |
| abstract | Methods and systems for MEMS devices with dual damascene formed electrodes is disclosed and may include forming first and second dielectric layers on a semiconductor substrate that includes a conductive layer at least partially covered by the first dielectric layer; removing a portion of the second dielectric layer; forming vias through the second dielectric layer and at least a portion of the second dielectric layer, where the via extends to the conductive layer; forming electrodes by filling the vias and a volume that is the removed portion of the second dielectric layer with a first metal; and coupling a micro-electro-mechanical systems (MEMS) substrate to the semiconductor substrate. A third dielectric layer may be formed between the first and second dielectric layers. A metal pad may be formed on at least one electrode by depositing a second metal on the electrode and removing portions of the second metal, which may be aluminum. |
| priorityDate | 2016-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.