| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-127
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1229
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7854 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-24 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2015-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b8358fc7712ffc46eff7cf4727ea683 |
| publicationDate |
2018-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9917110-B2 |
| titleOfInvention |
Semiconductor device |
| abstract |
A semiconductor device that is suitable for miniaturization is provided. The semiconductor device has a plurality of different transistors, active layers of the plurality of transistors are each an oxide semiconductor, and in the plurality of transistors, field-effect mobility of a transistor whose channel length is maximum and field-effect mobility of a transistor whose channel length is minimum are substantially constant. Alternatively, when channel lengths ranges from 0.01 μm to 100 μm, a reduction in field-effect mobility of a transistor whose channel length is minimum with respect to field-effect mobility of a transistor whose channel length is maximum is less than or equal to 70%. |
| priorityDate |
2014-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |