http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9915005-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ad856da99d5528ac0284a3ce4197ba19 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D3-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D7-123 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D7-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D3-38 |
| filingDate | 2013-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a716a4f0ac475f2c253857a5ac48439 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c03ddbd72e9e71aad69c1c4cd96e953 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_877cf30f7a76131c86b929d46a4e2a3f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35b4a70cb53fd62643c8b672c099df8a |
| publicationDate | 2018-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-9915005-B2 |
| titleOfInvention | Additive C capable of changing microvia-filling method by TSV copper plating, and electroplating solution containing same |
| abstract | An additive C capable of changing microvia-filling method by TSV copper plating, and electroplating solution containing same. The additive C contains by mass percentage: 5%-10%, one of polyethylene glycol or polyvinyl alcohol with the molecular weight of 200-100,000, or the mixture with different molecular weight thereof; 0.001%-0.5% isomer of the surfactant which including the alkylphenol polyoxyethylene ether or fatty alcohol-polyoxyethylene ether; and the solvent is water. The electroplating solution containing the additive C could be used for microvia-filling by TSV copper plating, the electroplating current distribution could be adjusted reasonably to realize the smooth transition between the conformal and bottom-up plating, so as to reduce the possibility of the seam or void in the coating, realize the high-speed electroplating, reduce the thickness of the copper layer, reduce the TSV plating duration and the cost of the chemical mechanical polishing (CMP), and significantly improve the production efficiency. |
| priorityDate | 2013-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 64.