http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9909230-B2

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dc744e119404fec0abdf375e51d1168d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_53d59dd9e667f1a7eb586fc6ec924298
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B7-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N23-207
filingDate 2016-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2018-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_63cf6b31d312886d58214fe16dc50a25
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5168d5df104f20103ddcebe061313d55
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publicationDate 2018-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-9909230-B2
titleOfInvention Seed selection and growth methods for reduced-crack group III nitride bulk crystals
abstract In one instance, the invention provides a method of growing bulk crystal of group III nitride using a seed crystal selected by (a) measuring x-ray rocking curves of a seed crystal at more than one point, (b) quantifying the peak widths of the measured x-ray rocking curves, and (c) evaluating the distribution of the quantified peak widths. The invention also includes the method of selecting a seed crystal for growing bulk crystal of group III nitride. n The bulk crystal of group III nitride can be grown in supercritical ammonia or a melt of group III metal using at least one seed selected by the method above.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10354863-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10287709-B2
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priorityDate 2006-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 38.