http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9899568-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_090887a4e6a299008a18e1487fb555c8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6c8d4dc7bd1a30d8fda907fceaeb4e69 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B19-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B21-0632 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B21-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B19-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
| filingDate | 2014-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82ff73853072fdd5b656768f5022a2ab http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0bb8de895c5e38a3c659f0a697a40d70 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6288b9862a33ab21cd1a655c976fedfc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5442d26b82e1ee22a02e16ea54879ce5 |
| publicationDate | 2018-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-9899568-B2 |
| titleOfInvention | Method of producing periodic table group 13 metal nitride semiconductor crystal and periodic table group 13 metal nitride semiconductor crystal produced by this production method |
| abstract | For a Periodic Table Group 13 metal nitride semiconductor crystal obtained by epitaxial growth on the main surface of a base substrate that has a nonpolar plane and/or a semipolar plane as its main surface, an object of the present invention is to provide a high-quality semiconductor crystal that has a low absorption coefficient, is favorable for a device, and is controlled dopant concentration in the crystal, and to provide a production method that can produce the semiconductor crystal. A high-quality Periodic Table Group 13 metal nitride semiconductor crystal that has a precisely controlled dopant concentration within the crystal and a low absorption coefficient and that is thus favorable for a device, can be provided by inhibiting oxygen doping caused by impurity oxygen and having the Si concentration higher than the O concentration. |
| priorityDate | 2011-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 64.