| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12043
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-131
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1446
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14609 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-107 |
| filingDate |
2017-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c82e3597105aba13214ba26eda23601 |
| publicationDate |
2018-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9899434-B1 |
| titleOfInvention |
Light-receiving device having avalanche photodiodes of different types |
| abstract |
A light-receiving device includes a silicon semiconductor substrate, a plurality of first serial connections each of which includes a first avalanche photodiode (APD) and a first resistor connected in series, and a plurality of second serial connections each of which includes a second avalanche photodiode (APD) and a second resistor connected in series. The first APDs and the first resistors are formed on the silicon semiconductor substrate, and the first APDs is formed of silicon. The second APDs and the second resistors are formed on the silicon semiconductor substrate, and the second APDs is formed of a material having a smaller band gap than silicon. The plurality of first and second serial connections is connected in parallel between an anode terminal and a cathode terminal. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107275433-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3540788-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10782428-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10497823-B2 |
| priorityDate |
2016-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |