| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82385 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823892
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0922
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82385
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0928
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 |
| filingDate |
2016-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20564a6a35033b05cc00ea28fda47d80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_36754deb2211251773ccd82fc96f17e8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6308746cf9a447560f4fc29154a765cf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9eb5aa9286d49a3830b775b598833a43
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78f3d018d75286c495af528863e2113f |
| publicationDate |
2018-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9899273-B1 |
| titleOfInvention |
Semiconductor structure with dopants diffuse protection and method for forming the same |
| abstract |
Semiconductor structures and methods for forming the same are provided. The method for forming a semiconductor structure includes forming an N-well region in a substrate and forming a first protection layer over the N-well region. The method for forming a semiconductor structure further includes forming a P-well region in the substrate and forming a second protection layer over the P-well region. The method for forming a semiconductor structure further includes growing a first channel layer over the first protection layer and a second channel layer over the second protection layer and forming a first gate structure over the first channel layer and a second gate structure over the second channel layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200001434-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019393040-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102339533-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11164746-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11322583-B2 |
| priorityDate |
2016-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |