| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02587
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02658
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-186
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0243
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2015-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba4223d86746fffe512e2587b503b7f6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_03c4ad4f1647ac75db115451a8be4a2b |
| publicationDate |
2018-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9896781-B2 |
| titleOfInvention |
Silicon carbide single-crystal substrate, silicon carbide epitaxial substrate and method of manufacturing them |
| abstract |
A silicon carbide single-crystal substrate includes a first main surface and a second main surface opposite to the first main surface. The first main surface has a maximum diameter of not less than 100 mm. The first main surface includes a first central region excluding a region within 3 mm from an outer circumference of the first main surface. When the first central region is divided into first square regions each having a side of 250 μm, each of the first square regions has an arithmetic average roughness (Sa) of less than 0.2 nm, and an oxygen concentration in each of the first square regions is not less than 5 atom % and less than 20 atom %. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021320005-A1 |
| priorityDate |
2014-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |