| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-221
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02359
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 |
| filingDate |
2016-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b29ad09b7d06e1ac9b02315a64d324d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8abb32c8d2047eaea49f87c32a1179f2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68c19788a46b5fb0a737238c1474e934
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_07cacd4043f820820509fcc8a754ca8d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_596b8bfba3c23cbdee29c2314e91a343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ccc90cef43e01f47f5daf0b7c099c9cd |
| publicationDate |
2018-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9892915-B2 |
| titleOfInvention |
Hard mask composition, carbon nanotube layer structure, pattern forming method, and manufacturing method of semiconductor device |
| abstract |
A manufacturing method of a semiconductor device includes forming a hard mask layer on a semiconductor substrate using a hard mask composition. Hard mask patterns are formed by patterning the hard mask layer. Semiconductor patterns are formed by etching the semiconductor substrate using the hard mask patterns. The hard mask composition includes a plurality of first carbon nanotubes (CNTs) having a first length, a plurality of second CNTs having a second length, which is at least 3 times the first length, and a dispersing agent in which the first CNTs and the second CNTs are dispersed. The total mass of the first CNTs is 1 to 2.5 times the total mass of the second CNTs. |
| priorityDate |
2015-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |