| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0338
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31155
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
| filingDate |
2017-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19441905d9f846441fb237963a3111ba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c15f831fb362ab77d0d194e1c26fd21 |
| publicationDate |
2018-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9887135-B1 |
| titleOfInvention |
Methods for providing variable feature widths in a self-aligned spacer-mask patterning process |
| abstract |
A method includes forming a first mandrel layer above a first process layer. A first implant region is formed in the first mandrel layer. The first mandrel layer is patterned to define a plurality of first mandrel elements. At least a first subset of the first mandrel elements is formed from the first mandrel layer outside the first implant region and a second subset of the first mandrel elements is formed from the first implant region. First spacers are formed on sidewalls of the plurality of first mandrel elements. The first subset of the first mandrel elements are selectively removed without removing the second subset of the first mandrel elements. The first process layer is patterned using the first spacers and the second subset of the first mandrel elements as an etch mask. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11462406-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11158536-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10366917-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10854452-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11605540-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10395937-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019067020-A1 |
| priorityDate |
2017-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |