| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_62ebc840815e8ac24212643090d1fce4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e0979d948cb03f51afe8f9254785ca71 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D7-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288 |
| filingDate |
2011-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_823f9160614bb6982cb142be5d43386d |
| publicationDate |
2018-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9881836-B2 |
| titleOfInvention |
Method for manufacturing semiconductor device |
| abstract |
A method for manufacturing semiconductor devices comprises: applying a dual pulse power to the semiconductor device during metal electroplating a part of the semiconductor device and applying ultrasonic energy to said semiconductor device during the metal electroplating. |
| priorityDate |
2011-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |