| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate |
2017-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23f870cb073ebdc9a619e4a7c90506e0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a6077cfd6db9da7d961dbe202f9cb3c5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa4c29a8069796ae85feaf8f43ed21bf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b3c039d66d9113c8a8f4f1b0471630c3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_008d7debbb0ecc9b82b99eadde1b962b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_13582def6e36e293a5c17812ab6d4a9c |
| publicationDate |
2018-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9876116-B2 |
| titleOfInvention |
Semiconductor structure and manufacturing method for the same |
| abstract |
A semiconductor structure and a manufacturing method for the same are disclosed. The semiconductor structure includes a first gate structure, a second gate structure and a second dielectric spacer. Each of the first gate structure and the second gate structure adjacent to each other includes a first dielectric spacer. The second dielectric spacer is on one of opposing sidewalls of the first gate structure and without being disposed on the dielectric spacer of the second gate structure. |
| priorityDate |
2014-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |