| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_02ccf5bf901b187de473a7c972231c56 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-4148
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02192
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02172
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02186 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-414
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812 |
| filingDate |
2014-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7fdb6f170cf070d27202be12404a6d21
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f859028a583cb4449908854a7a0828a7 |
| publicationDate |
2018-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9869657-B2 |
| titleOfInvention |
Ion sensitive device and method of fabrication |
| abstract |
A sol-gel deposition technique that forms ion sensitive layers is compatible with CMOS fabrication methods and is applied to build sensors of concentrations of solutions of selected target ions. The ion sensitive sensor may be formed on an exposed portion of a signal trace of a printed circuit board. Additionally, the ion sensitive layer may be formed within an ion sensitive field effect transistor. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10794854-B2 |
| priorityDate |
2013-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |