| abstract |
An integrated circuit including a self-aligned under bump metal pad formed on a top metal interconnect level in a connection opening in a dielectric layer, with a solder ball formed on the self-aligned under bump metal pad. Processes of forming integrated circuits including a self-aligned under bump metal pad formed on a top metal interconnect level in a connection opening in a dielectric layer, by a process of forming one or more metal layers on the interconnect level and the dielectric layer, selectively removing the metal from over the dielectric layer, and subsequently forming a solder ball on the self-aligned under bump metal pad. Some examples include additional metal layers formed after the selective removal process, and may include an additional selective removal process on the additional metal layers. |