| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2016-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-01-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a287ec6a3cba07a340ef278a43369b0b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_124605f184cacf24d1ec01748a229026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_935b3100009b689cc2de04f619b479c2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f730533bc648b50eb43755a8c3139173
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a43cc7ea10631af53a03362f3cbf78e5 |
| publicationDate |
2018-01-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9859102-B2 |
| titleOfInvention |
Method of etching porous film |
| abstract |
A method of etching a porous film is provided. The method includes supplying a first gas into a processing chamber of a plasma processing apparatus in which an object to be processed including a porous film is accommodated, and generating a plasma of a second gas for etching the porous film in the processing chamber. The first gas is a processing gas having a saturated vapor pressure of less than or equal to 133.3 Pa at a temperature of a stage on which the object is mounted in the processing chamber, or includes the processing gas. In the step of supplying the first gas, no plasma is generated, and a partial pressure of the processing gas which is supplied into the processing chamber is set to be greater than or equal to 20% of the saturated vapor pressure. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10236162-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11087989-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11476122-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11515166-B2 |
| priorityDate |
2015-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |