Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7bd1ce508c43f3b603b94f47917a29c3 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-156 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B33-0815 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B45-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B45-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B33-083 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-483 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-15 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-15 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B44-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-48 |
filingDate |
2015-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2017-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42e2122e9e0924c47181e02b0017f930 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aba9f0a12ef5255cd6d9d1448cde93ac http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33e73e196769f02469f99635d4c9a142 |
publicationDate |
2017-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-9854632-B2 |
titleOfInvention |
Optoelectronic circuit with low-flicker light-emitting diodes |
abstract |
An optoelectronic circuit for receiving a variable voltage having alternating increasing and decreasing phases. The optoelectronic circuit includes an alternating arrangement of resistive elements and light-emitting diode sets mounted in series. Each set contains two terminals. Each resistive element is inserted between two consecutive sets. The optoelectronic circuit includes, for each set among a plurality of said sets, a depletion mode metal oxide semiconductor field effect transistor, the drain and the source of which are coupled with the terminals of said set and the gate of which is coupled with one of the terminals of the next set. An additional resistive element is, for at least some of the transistors, coupled between the drain or the source of the transistor and one of the terminals of the set. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017305326-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10516077-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10562438-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11664384-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11018158-B2 |
priorityDate |
2014-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |