Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d255beb0d26715fe21a5f769bf3b0d96 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0257 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02636 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7853 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-845 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-70 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
filingDate |
2016-05-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2017-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e33014a7b15b36a9e84dc7ec742312be http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea7ae97cb310ac342e956614a9eef592 |
publicationDate |
2017-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-9853030-B2 |
titleOfInvention |
Fin field effect transistor |
abstract |
Various embodiments provide semiconductor devices and methods for forming the same. A first fin and a second fin are formed on a semiconductor substrate. A first dielectric layer is formed on the semiconductor substrate and has a top surface lower than a top surface of both of the first fin and the second fin. A gate structure is formed on the first dielectric layer and covering across a first portion of each of the first fin and the second fin. A second portion of the first fin on both sides of the gate structure is removed, forming a first recess. A first semiconductor layer is formed in the first recess. A second dielectric layer is formed on the first dielectric layer and the first semiconductor layer, and exposes a top surface of the second fin. A second semiconductor layer is formed on the exposed top surface of the second fin. |
priorityDate |
2013-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |