| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0928
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 |
| filingDate |
2016-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ddff1fea07a7cc9e801a687d914be4e9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2542f785501b8d7cb7b286963c205a57
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35344aa7dd5361f9ffcaeb42ba63e2fd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd09248c584e93892a117ad69e2eb372 |
| publicationDate |
2017-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9847334-B1 |
| titleOfInvention |
Structure and formation method of semiconductor device with channel layer |
| abstract |
Structures and formation methods of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate with a first lattice constant and having a PMOS region and an NMOS region. The semiconductor device further includes first and second fin structures over the PMOS region and NMOS region respectively. The first fin structure includes a buffer layer with a second lattice constant and a first channel layer. The lattice constant difference between the first channel layer and the buffer layer is smaller than that between the first channel layer and the semiconductor layer. The first channel layer has a third lattice constant, which is greater than the second lattice constant. The first lattice constant is greater than the second lattice constant. The second fin structure includes a second channel layer. The second channel layer has a fourth lattice constant which is less than the first lattice constant. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112951765-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021280711-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10381476-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019244812-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10546932-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020144374-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10529558-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10361303-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102020105455-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10043900-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10720522-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019245042-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11670551-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11705372-B2 |
| priorityDate |
2016-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |