| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76849
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53209
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 |
| filingDate |
2016-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_655ae29af9b593ce587fa5013a80769f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc9e6d06ba12067c4e7d948f255e0045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e2c715bbb779eb4dc1a777bf5d3f663
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e62412f65dde8c1614dcf9ba11e09202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba51711fe7c8ebed6de64040e6cd518f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_14870c2766bad9e8966ee22660cfe456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b3a3e98debad3a08c3c6d422951032f2 |
| publicationDate |
2017-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9847256-B2 |
| titleOfInvention |
Methods for forming a device having a capped through-substrate via structure |
| abstract |
A device including a first dielectric layer on a semiconductor substrate, a gate electrode formed in the first dielectric layer, and a through-substrate via (TSV) structure penetrating the first dielectric layer and extending into the semiconductor substrate. The TSV structure includes a conductive layer, a diffusion barrier layer surrounding the conductive layer and an isolation layer surrounding the diffusion barrier layer. A capping layer including cobalt is formed on the top surface of the conductive layer of the TSV structure. |
| priorityDate |
2013-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |