Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73e2edff8c04f468cddb7feb8c0aa1e3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_eac3827d0bfcf58d391193bee2611f03 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-548 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-546 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0747 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1884 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0725 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0745 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03682 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1868 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0725 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-07 |
filingDate |
2015-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2017-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c2d6fc5fc7c52089591a18a51484b2a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_786bcab8f1816e1e992bfa344dabdcb1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6d5afc232dce368be45439e1f7cf55e9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1dff32614ea770a7f1991ae64b377c07 |
publicationDate |
2017-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-9842956-B2 |
titleOfInvention |
System and method for mass-production of high-efficiency photovoltaic structures |
abstract |
One embodiment of the invention can provide a system for fabricating a photovoltaic structure. During fabrication, the system can form a sacrificial layer on a first side of a Si substrate; load the Si substrate into a chemical vapor deposition tool, with the sacrificial layer in contact with a wafer carrier; and form a first doped Si layer on a second side of the Si substrate. The system subsequently can remove the sacrificial layer; load the Si substrate into a chemical vapor deposition tool, with the first doped Si layer facing a wafer carrier; and form a second doped Si layer on the first side of the Si substrate. |
priorityDate |
2015-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |