| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-04 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0236 |
| filingDate |
2016-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2eeffbfafe50b76d55b55b1a70713ec1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ccf8da986204cd604561a995628276aa |
| publicationDate |
2017-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9831378-B2 |
| titleOfInvention |
Semiconductor light emitting device and method of manufacturing the same |
| abstract |
A method of manufacturing a semiconductor light emitting device is provided. The method includes forming a first region of a lower semiconductor layer on a substrate, etching an upper surface of the first region using at least one gas used in forming the first region, in-situ in a chamber in which a process of forming the first region has been performed, forming a second region of the lower semiconductor layer on the first region, forming an active layer on the lower semiconductor layer, and forming an upper semiconductor layer on the active layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021367102-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11670736-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11502221-B2 |
| priorityDate |
2015-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |