| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_60e66be87630d7cef0ce770e1d898eec |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73204
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-535
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-535
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2016-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_effe09cb9be2852afac2ab45dccb8e7d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d1147f4970ded8eccefda4d32e76e1f8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90ab196ecd0a4314357708fb1a5e9e19
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9c2472e6c9132afc20ecba3c615abd1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c7ceb63dd85ddce9a9d0ac41697dd2d5 |
| publicationDate |
2017-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9818645-B2 |
| titleOfInvention |
Through electrode, manufacturing method thereof, and semiconductor device and manufacturing method thereof |
| abstract |
Embodiments provided are a through electrode that can be manufactured by a method not including the step of removing a side-wall insulating film formed at the bottom part of the through hole and so having improved electrical characteristics and mechanical reliability and a manufacturing method thereof as well as a semiconductor device and a manufacturing method thereof. A through electrode is disposed in a semiconductor substrate, and includes: a conductive layer; a side-wall insulating film that is disposed between the conductive layer and the semiconductor substrate, the side-wall insulating film being represented by the following chemical formula (1), and a tubular semiconductor layer disposed between the conductive layer and the semiconductor substrate, the semiconductor layer including a same material as the material of the semiconductor substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10290584-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10629537-B2 |
| priorityDate |
2016-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |