http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9796585-B2

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e433c1625fc509a087c912b440da84b
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00904
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C99-004
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C99-00
filingDate 2016-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2017-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_133a456791e7c47261a020b2349a5162
publicationDate 2017-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-9796585-B2
titleOfInvention Leak detection using cavity surface quality factor
abstract A method of leak detection of hermetically sealed cavities semiconductor devices is provided. Scribe streets are formed with access from each packaged device on a first substrate to the edge of the first substrate. The first substrate is attached to a second substrate, forming gaps between the two substrates. A cavity is formed around a packaged device on the first substrate by attaching a bond ring to the first substrate and an optically transparent window above the bonding ring. The cavity is evacuated. A high powered laser beam strikes the top surface of the device on the first substrate within the cavity and creates a vertical surface displacement of the first substrate. The vertical surface displacement is monitored using a separate interrogation laser beam. Leakage of the cavity can be measured by characterizing the resonance decay rate, Q.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10132712-B1
priorityDate 2015-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 21.